Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

V. V. Ilchenko*, Sheng-Di Lin, C. P. Lee, O. V. Tretyak

*Corresponding author for this work

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

Deep level transient spectroscopy (DLTS) was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.

Original languageEnglish
Pages (from-to)1172-1174
Number of pages3
JournalJournal of Applied Physics
Volume89
Issue number2
DOIs
StatePublished - 15 Jan 2001

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