Deep hole traps created by gamma-ray irradiation of GaInP

Wei Jer Sung*, Tong Yuan Liu, Su Lin Yang, Kai-Feng Huang, Tseung-Yuen Tseng, Fong In Chou, Yuan Yaw Wei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Deep hole traps created by gamma-ray irradiation of Al/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Two distinct deep hole traps, A and B, were observed in the irradiated GaInP samples. According to the analysis of trap concentration in various samples, the trap A is verified as a bulk defect located at 0.29 eV above the valance band. Meanwhile, the trap B is an interface state originated from the junctions of Al/Mg-doped GaInP contacts.

Original languageEnglish
Pages (from-to)6807-6808
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number12R
DOIs
StatePublished - 1 Dec 2001

Keywords

  • DLTS
  • Deep level
  • Defect
  • GaInP
  • Gamma-ray
  • Irradiation
  • Trap

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