Deep etch of GaP using high-density plasma for light-emitting diode applications

D. S. Wuu*, C. R. Chung, Y. H. Liu, Ray-Hua Horng, S. H. Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

Deep etching of GaP was performed using high density plasma in an inductively coupled plasma reactor. The effects of process parameters like gas combination and inductive power were investigated. Response surface method was used to analyze the dependence of etch rates and selectivity on rf chunk power and chamber pressure. The mechanism of leakage current density and brightness with various rf powers on AlGaInP light emitting diodes with a thick GaP window layer was studied. The increase in etch rate with increasing pressure chamber was observed.

Original languageEnglish
Pages (from-to)902-908
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
StatePublished - 1 May 2002
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: 1 Oct 20013 Oct 2001

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