Deep electron trapping centers in Te-doped (AlxGa1-x)0.5In0.5P (x = 0.5) layers grown by metal-organic chemical vapor deposition

Wei Jer Sung, Kai-Feng Huang, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The properties of deep electron trapping centers of Te-doped (AlxGa1-x)0.5In0.5P (x = 0.5) layers grown metal-organic chemical vapor deposition (MOCVD) are studied by using deep level transient spectroscopy (DLTS) technique. One distinct deep electron trap located at 0.165 ± 0.01 eV is observed and found to increase as elevating Te-dopant concentration in (AlxGa1-x)0.5In0.5P (x = 0.5) materials, indicating that this deep electron trap is a donor-related defect and has the similar characters as deep levels observed in Si- and Se-doped (AlxGa1-x)0.5In0.5P.

Original languageEnglish
Pages (from-to)3671-3672
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number6 A
DOIs
StatePublished - 1 Jun 2002

Keywords

  • AlGaInP
  • Deep level
  • Defect
  • DLTS
  • Donor-related defect
  • Te

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