The properties of deep electron trapping centers of Te-doped (AlxGa1-x)0.5In0.5P (x = 0.5) layers grown metal-organic chemical vapor deposition (MOCVD) are studied by using deep level transient spectroscopy (DLTS) technique. One distinct deep electron trap located at 0.165 ± 0.01 eV is observed and found to increase as elevating Te-dopant concentration in (AlxGa1-x)0.5In0.5P (x = 0.5) materials, indicating that this deep electron trap is a donor-related defect and has the similar characters as deep levels observed in Si- and Se-doped (AlxGa1-x)0.5In0.5P.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||6 A|
|State||Published - 1 Jun 2002|
- Deep level
- Donor-related defect