Deep depletion phenomenon of SrTiO3 gate dielectric capacitor

Chih Yi Liu*, Bo Yang Chen, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


The formation of metal/insulator semiconductor (MIS) structure by the deposition of SrTiO3 (STO) thin films on p-type silicon substrate by radio-frequency (rf) magnetron sputtering was discussed. The CETs of the nitrogen grown films were less than those of oxygen grown films. It was found that the Schottky emission and Fowler-Nordheim tunneling mechanisms as responsible for leakage current in STO-based MIS structures at low and high electric fields. The results show that the generation current dominated by the leakage mechanisms at the high electric field under positive bias voltage due to the highly leaky insulator and lack of electron.

Original languageEnglish
Pages (from-to)5602-5607
Number of pages6
JournalJournal of Applied Physics
Issue number10
StatePublished - 15 May 2004

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