Deep depletion phenomenon of SrTiO₃ gate dielectric capacitor

The formation of metal/insulator semiconductor (MIS) structure by the deposition of SrTiO₃ (STO) thin films on p-type silicon substrate by radio-frequency (rf) magnetron sputtering was discussed. The CETs of the nitrogen grown films were less than those of oxygen grown films. It was found that the Schottky emission and Fowler-Nordheim tunneling mechanisms as responsible for leakage current in STO-based MIS structures at low and high electric fields. The results show that the generation current dominated by the leakage mechanisms at the high electric field under positive bias voltage due to the highly leaky insulator and lack of electron.