Deactivation of group III acceptors in silicon during keV electron irradiation

Chih Tang Sah*, Jack Yuan Chen Sun, Joseph Jengtao Tzou, Sam Cheng Sheng Pan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N, with N(B)<N (Al)<N(In), which agrees with the chemical bond strength sequence B-H>Al-H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond.

Original languageEnglish
Pages (from-to)962-964
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number10
DOIs
StatePublished - 1983

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