DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ/metal-gate devices

Hui Wen Cheng; Yung Yueh Chiu; Yiming Li

doi:10.1109/INEC.2011.5991747

DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ/metal-gate devices

Hui Wen Cheng^*, Yung Yueh Chiu, Yiming Li

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We study effects of interface traps (ITs) and random dopants (RDs) on 16-nm high-κ/metal gate MOSFETs. Totally random generated devices with 2D ITs at the HfO₂/silicon oxide interface as well as 3D RDs inside the channel are simulated. Fluctuations of threshold voltage, on/off state current and gate capacitance of the tested devices are estimated and discussed. The results indicate the aforementioned fluctuations resulting from ITs and RDs are significant; and RD fluctuation is larger than that of ITs.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991747
State	Published - 2011
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 21 Jun 2011 → 24 Jun 2011

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Conference

Conference	4th IEEE International Nanoelectronics Conference, INEC 2011
Country	Taiwan
City	Tao-Yuan
Period	21/06/11 → 24/06/11

Keywords

3D device simulation
DC/AC fluctuations
device variability
interface trap
random dopant
random position effect

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10.1109/INEC.2011.5991747

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Cite this

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title = "DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ/metal-gate devices",

abstract = "We study effects of interface traps (ITs) and random dopants (RDs) on 16-nm high-κ/metal gate MOSFETs. Totally random generated devices with 2D ITs at the HfO2/silicon oxide interface as well as 3D RDs inside the channel are simulated. Fluctuations of threshold voltage, on/off state current and gate capacitance of the tested devices are estimated and discussed. The results indicate the aforementioned fluctuations resulting from ITs and RDs are significant; and RD fluctuation is larger than that of ITs.",

keywords = "3D device simulation, DC/AC fluctuations, device variability, interface trap, random dopant, random position effect",

author = "Cheng, {Hui Wen} and Chiu, {Yung Yueh} and Yiming Li",

year = "2011",

doi = "10.1109/INEC.2011.5991747",

language = "English",

isbn = "9781457703799",

series = "Proceedings - International NanoElectronics Conference, INEC",

booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",

note = "null ; Conference date: 21-06-2011 Through 24-06-2011",

}

Cheng, HW, Chiu, YY & Li, Y 2011, DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ/metal-gate devices. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991747, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 21/06/11. https://doi.org/10.1109/INEC.2011.5991747

DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ/metal-gate devices. / Cheng, Hui Wen; Chiu, Yung Yueh; Li, Yiming.

4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991747 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ/metal-gate devices

AU - Cheng, Hui Wen

AU - Chiu, Yung Yueh

AU - Li, Yiming

PY - 2011

Y1 - 2011

N2 - We study effects of interface traps (ITs) and random dopants (RDs) on 16-nm high-κ/metal gate MOSFETs. Totally random generated devices with 2D ITs at the HfO2/silicon oxide interface as well as 3D RDs inside the channel are simulated. Fluctuations of threshold voltage, on/off state current and gate capacitance of the tested devices are estimated and discussed. The results indicate the aforementioned fluctuations resulting from ITs and RDs are significant; and RD fluctuation is larger than that of ITs.

AB - We study effects of interface traps (ITs) and random dopants (RDs) on 16-nm high-κ/metal gate MOSFETs. Totally random generated devices with 2D ITs at the HfO2/silicon oxide interface as well as 3D RDs inside the channel are simulated. Fluctuations of threshold voltage, on/off state current and gate capacitance of the tested devices are estimated and discussed. The results indicate the aforementioned fluctuations resulting from ITs and RDs are significant; and RD fluctuation is larger than that of ITs.

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KW - DC/AC fluctuations

KW - device variability

KW - interface trap

KW - random dopant

KW - random position effect

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