DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ/metal-gate devices

Hui Wen Cheng*, Yung Yueh Chiu, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We study effects of interface traps (ITs) and random dopants (RDs) on 16-nm high-κ/metal gate MOSFETs. Totally random generated devices with 2D ITs at the HfO2/silicon oxide interface as well as 3D RDs inside the channel are simulated. Fluctuations of threshold voltage, on/off state current and gate capacitance of the tested devices are estimated and discussed. The results indicate the aforementioned fluctuations resulting from ITs and RDs are significant; and RD fluctuation is larger than that of ITs.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • 3D device simulation
  • DC/AC fluctuations
  • device variability
  • interface trap
  • random dopant
  • random position effect

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