By applying 0.7% tensile strain to the flexible die of a 0.13 μm thin-body (40 μm) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current Id,sat was 14.3% higher, and fT increased from 103 to 118 GHz with NFmin decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 1 Dec 2006|
|Event||2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States|
Duration: 11 Jun 2006 → 16 Jun 2006
- Associated gain
- RF noise