DC-RF performance improvement for strained 0.13 μm MOSFETs mounted on a flexible plastic substrate

H. L. Kao*, Albert Chin, C. C. Liao, Y. Y. Tseng, S. P. McAlister, C. C. Chi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

By applying 0.7% tensile strain to the flexible die of a 0.13 μm thin-body (40 μm) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current Id,sat was 14.3% higher, and fT increased from 103 to 118 GHz with NFmin decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost.

Original languageEnglish
Article number4015364
Pages (from-to)2043-2046
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
DOIs
StatePublished - 1 Dec 2006
Event2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States
Duration: 11 Jun 200616 Jun 2006

Keywords

  • Associated gain
  • MOSFET
  • Plastic
  • RF noise

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