Dc electrical oxide thickness model for quantization of the inversion layer in MOSFETs

Ya Chin King*, Hiroshi Fujioka, Shiroo Kamohara, Kai Chen, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

A simulator using the coupled Schrödinger equation, the Poisson equation and Fermi-Dirac statistics to analyse inversion-layer quantization has been shown to match the measured C-V data of thin-gate-oxide metal-oxide semiconductor (MOS) capacitors closely. This simulator is used to study in detail the effects of bias voltage, oxide thickness and doping concentration on the charge centroid and from this a simple empirical model for the dc charge centroid of the inversion layer is proposed. This model predicts the inversion charge density in terms of T ox , V t and V g explicitly and can be used to estimate transistor current in device engineering and circuit simulation models.

Original languageEnglish
Pages (from-to)963-966
Number of pages4
JournalSemiconductor Science and Technology
Volume13
Issue number8
DOIs
StatePublished - 1 Aug 1998

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