DC characteristics of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Shu Han Chen*, Chao Min Chang, Pei Yi Chiang, Sheng Yu Wang, Wen-Hao Chang, Jen Inn Chyi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I baseemitter junction and a type-II basecollector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current, and constant current gain over a wide current range. In addition, the DHBTs exhibit rather high current gains despite the use of a heavily doped thick InGaAsSb base layer. This indicates the long minority carrier lifetime of the InGaAsSb material. A high current gain over base sheet resistance ratio is, thus, realized with these novel DHBTs.

Original languageEnglish
Article number5587883
Pages (from-to)3327-3332
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number12
DOIs
StatePublished - 1 Dec 2010

Keywords

  • Heterojunction bipolar transistors (HBTs)
  • InAlAs/InGaAsSb
  • type-II basecollector (B/C) junction

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