DC-12-Ghz 10-DB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 μM SiGe HBT technology

Chin-Chun Meng*, T. H. Wu, G. W. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The realization of wideband amplifiers with shunt-series shunt-shunt dual-feedback configuration with commercially available 0.35-μm SiGe BiCMOS technology is reported. The SiGe HBT used here has ft of 67 GHz and BVceo of 2.5 V. The experimental results show that power gain is 10 dB from DC to 12 GHz for a shunt-series shunt-shunt wideband amplifier, with the help of the emitter capacitive peaking technique. Input- and output-return losses are better than 10 dB for the same frequency range. Noise figure increases from 8 to 12 dB for frequencies from 1 to 18 GHz. OP1dB and OIP3 are 0 dBm and 12 dBm at 1 GHz, respectively. Total current consumption is 11 mA at 3.3 V supply voltage.

Original languageEnglish
Pages (from-to)518-520
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume40
Issue number6
DOIs
StatePublished - 20 Mar 2004

Keywords

  • Amplifiers
  • HBT
  • SiGe

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