Data retention characteristics of flash memory cells after write and erase cycling

Seiichi Aritome*, Shirota Riichiro, Koji Sakui, Fujio Masuoka

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The data retention characteristics of a Flash memory cell with a self-aligned double poly-Si stacked structure have been drastically improved by applying a bi-polarity write and erase technology which uses uniform Fowler-Nordheim tunneling over the whole channel area both during write and erase. It is clarified experimentally that the detrapping of electrons from the gate oxide to the substrate results in an extended retention time. A bi-polarity write and erase technology also guarantees a wide cell threshold voltage window even after 106 write/erase cycles. This technology results in a highly reliable EEPROM with an extended data retention time.

Original languageEnglish
Pages (from-to)1287-1294
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE77-C
Issue number8
StatePublished - 1 Aug 1994

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