Data retention behavior of a SONOS type two-bit storage flash memory cell

W. J. Tsai*, N. K. Zous, C. J. Liu, C. C. Liu, C. H. Chen, Ta-Hui Wang, Sam Pan, Chih Yuan Lu, S. H. Gu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

78 Scopus citations


Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are investigated. In erase (low-Vt) state, a threshold voltage drift with storage time is observed after P/E cycling stress. Positive trapped charge creation in the bottom oxide is found to be responsible for the drift. In program (high-Vt) state, data retention loss is attributed mostly to nitride charge escape by Frenkel-Poole emission and oxide trap assisted tunneling. A square-root dependence of the nitride charge loss on electric field is obtained. A Vg-acceleration method for retention lifetime measurement is proposed.

Original languageEnglish
Pages (from-to)719-722
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2 Dec 20015 Dec 2001

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