Cycling induced degradation of a 65nm FPGA Flash memory switch

Ben A. Schmid; James Yingbo Jia; Jonathan Wolfman; Yu Wang; Fethi Dhaoui; Huan Chung Tseng; Sung Rae Kim; Kin Sing Lee; Patty Liu; Kyung Joon Han; Chen-Ming Hu

doi:10.1109/IIRW.2010.5706495

Cycling induced degradation of a 65nm FPGA Flash memory switch

Ben A. Schmid, James Yingbo Jia, Jonathan Wolfman, Yu Wang, Fethi Dhaoui, Huan Chung Tseng, Sung Rae Kim, Kin Sing Lee, Patty Liu, Kyung Joon Han, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We present a study of cycling induced degradation of a two transistor Flash memory cell with a shared floating gate. The cell directly serves as a configurable interconnection switch in a Field Programmable Gate Array (FPGA) fabricated with a 65 nm embedded-Flash process. By optimizing the poly re-oxidation, LDD implant and spacer module, the cell endurance is significantly improved at both the single cell and 1 Mbit test-array levels.

Original language	English
Title of host publication	2010 IEEE International Integrated Reliability Workshop Final Report, IIRW 2010
Pages	92-94
Number of pages	3
DOIs	https://doi.org/10.1109/IIRW.2010.5706495
State	Published - 1 Dec 2010
Event	2010 IEEE International Integrated Reliability Workshop, IIRW 2010 - South Lake Tahoe, CA, United States Duration: 17 Oct 2010 → 21 Oct 2010

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Conference

Conference	2010 IEEE International Integrated Reliability Workshop, IIRW 2010
Country	United States
City	South Lake Tahoe, CA
Period	17/10/10 → 21/10/10

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Schmid, B. A., Jia, J. Y., Wolfman, J., Wang, Y., Dhaoui, F., Tseng, H. C., Kim, S. R., Lee, K. S., Liu, P., Han, K. J., & Hu, C-M. (2010). Cycling induced degradation of a 65nm FPGA Flash memory switch. In 2010 IEEE International Integrated Reliability Workshop Final Report, IIRW 2010 (pp. 92-94). [5706495] (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IIRW.2010.5706495

Schmid, Ben A. ; Jia, James Yingbo ; Wolfman, Jonathan ; Wang, Yu ; Dhaoui, Fethi ; Tseng, Huan Chung ; Kim, Sung Rae ; Lee, Kin Sing ; Liu, Patty ; Han, Kyung Joon ; Hu, Chen-Ming. / Cycling induced degradation of a 65nm FPGA Flash memory switch. 2010 IEEE International Integrated Reliability Workshop Final Report, IIRW 2010. 2010. pp. 92-94 (IEEE International Integrated Reliability Workshop Final Report).

@inproceedings{06065de321114b72af061a71f8fad9d0,

title = "Cycling induced degradation of a 65nm FPGA Flash memory switch",

abstract = "We present a study of cycling induced degradation of a two transistor Flash memory cell with a shared floating gate. The cell directly serves as a configurable interconnection switch in a Field Programmable Gate Array (FPGA) fabricated with a 65 nm embedded-Flash process. By optimizing the poly re-oxidation, LDD implant and spacer module, the cell endurance is significantly improved at both the single cell and 1 Mbit test-array levels.",

author = "Schmid, {Ben A.} and Jia, {James Yingbo} and Jonathan Wolfman and Yu Wang and Fethi Dhaoui and Tseng, {Huan Chung} and Kim, {Sung Rae} and Lee, {Kin Sing} and Patty Liu and Han, {Kyung Joon} and Chen-Ming Hu",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/IIRW.2010.5706495",

language = "English",

isbn = "9781424485246",

series = "IEEE International Integrated Reliability Workshop Final Report",

pages = "92--94",

booktitle = "2010 IEEE International Integrated Reliability Workshop Final Report, IIRW 2010",

note = "null ; Conference date: 17-10-2010 Through 21-10-2010",

}

Schmid, BA, Jia, JY, Wolfman, J, Wang, Y, Dhaoui, F, Tseng, HC, Kim, SR, Lee, KS, Liu, P, Han, KJ & Hu, C-M 2010, Cycling induced degradation of a 65nm FPGA Flash memory switch. in 2010 IEEE International Integrated Reliability Workshop Final Report, IIRW 2010., 5706495, IEEE International Integrated Reliability Workshop Final Report, pp. 92-94, 2010 IEEE International Integrated Reliability Workshop, IIRW 2010, South Lake Tahoe, CA, United States, 17/10/10. https://doi.org/10.1109/IIRW.2010.5706495

Cycling induced degradation of a 65nm FPGA Flash memory switch. / Schmid, Ben A.; Jia, James Yingbo; Wolfman, Jonathan; Wang, Yu; Dhaoui, Fethi; Tseng, Huan Chung; Kim, Sung Rae; Lee, Kin Sing; Liu, Patty; Han, Kyung Joon; Hu, Chen-Ming.

2010 IEEE International Integrated Reliability Workshop Final Report, IIRW 2010. 2010. p. 92-94 5706495 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Cycling induced degradation of a 65nm FPGA Flash memory switch

AU - Schmid, Ben A.

AU - Jia, James Yingbo

AU - Wolfman, Jonathan

AU - Wang, Yu

AU - Dhaoui, Fethi

AU - Tseng, Huan Chung

AU - Kim, Sung Rae

AU - Lee, Kin Sing

AU - Liu, Patty

AU - Han, Kyung Joon

AU - Hu, Chen-Ming

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We present a study of cycling induced degradation of a two transistor Flash memory cell with a shared floating gate. The cell directly serves as a configurable interconnection switch in a Field Programmable Gate Array (FPGA) fabricated with a 65 nm embedded-Flash process. By optimizing the poly re-oxidation, LDD implant and spacer module, the cell endurance is significantly improved at both the single cell and 1 Mbit test-array levels.

AB - We present a study of cycling induced degradation of a two transistor Flash memory cell with a shared floating gate. The cell directly serves as a configurable interconnection switch in a Field Programmable Gate Array (FPGA) fabricated with a 65 nm embedded-Flash process. By optimizing the poly re-oxidation, LDD implant and spacer module, the cell endurance is significantly improved at both the single cell and 1 Mbit test-array levels.

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U2 - 10.1109/IIRW.2010.5706495

DO - 10.1109/IIRW.2010.5706495

M3 - Conference contribution

AN - SCOPUS:79952425633

SN - 9781424485246

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 92

EP - 94

BT - 2010 IEEE International Integrated Reliability Workshop Final Report, IIRW 2010

Y2 - 17 October 2010 through 21 October 2010

ER -

Cycling induced degradation of a 65nm FPGA Flash memory switch

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