CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

Tien-Chang Lu, Chih Chiang Kao, Hao-Chung Kuo, Gen Sheng Huang, Shing Chung Wang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

247 Scopus citations

Abstract

Here, we report the cw laser operation of electrically pumped GaN-based vertical cavity surface emitting laser (VCSEL). The GaN-based VCSEL has a ten-pair InGaNGaN multiple quantum well active layer embedded in a GaN hybrid microcavity of 5λ optical thickness with two high reflectivity mirrors provided by an epitaxially grown AlNGaN distributed Bragg reflector (DBR) and a Ta2 O5 Si O2 dielectric DBR. cw laser action was achieved at a threshold injection current of 1.4 mA at 77 K. The laser emitted a blue wavelength at 462 nm with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7° with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5× 10-2 was measured.

Original languageEnglish
Article number141102
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number14
DOIs
StatePublished - 7 Apr 2008

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