Here, we report the cw laser operation of electrically pumped GaN-based vertical cavity surface emitting laser (VCSEL). The GaN-based VCSEL has a ten-pair InGaNGaN multiple quantum well active layer embedded in a GaN hybrid microcavity of 5λ optical thickness with two high reflectivity mirrors provided by an epitaxially grown AlNGaN distributed Bragg reflector (DBR) and a Ta2 O5 Si O2 dielectric DBR. cw laser action was achieved at a threshold injection current of 1.4 mA at 77 K. The laser emitted a blue wavelength at 462 nm with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7° with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5× 10-2 was measured.