Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS

H. S. Momose*, E. Morifuji, T. Yoshitomi, T. Ohguro, M. Saito, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

The high-frequency AC characteristics of 1.5-nm direct-tunneling gate SiO2 CMOS are described. Very high cutoff frequencies of 170 GHz and 245 GHz were obtained for 0.08-μm and 0.06-μm gate length nMOSFETs at room temperature. Cutoff frequency of 65 GHz was obtained for 0.15-μm gate length pMOSFETs using 1.5-nm gate SiO2 for the first time. The normal oscillations of the 1.5-nm gate SiO2 CMOS ring oscillators were also confirmed. In addition, this paper investigates the cutoff frequency and propagation delay time in recent small-geometry CMOS and discusses the effect of gate oxide thinning. The importance of reducing the gate oxide thickness in the direct-tunneling regime is discussed for sub-0.1-μm gate length CMOS in terms of high-frequency, high-speed operation.

Original languageEnglish
Pages (from-to)1165-1174
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume48
Issue number6
DOIs
StatePublished - Jun 2001

Keywords

  • CMOS
  • Cutoff frequency
  • Gate oxide
  • MOSFET
  • Propagation delay time
  • Scaling

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