Current transport mechanisms of schottky barrier and modified schottky barrier MOSFETs

Bing Yue Tsui*, Chi Pei Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

11 Scopus citations

Abstract

Current transport mechanisms of Schottky barrier (SB) and Modified Schottky barrier (MSB) MOSFETs are investigated by measuring the temperature effect on current-voltage characteristics. For SB MOSFETs, current transport could be dominated by thermionic emission or tunneling mechanism depends on the Schottky barrier height and the gate voltage. The current transport of the MSB MOSFETs changes from tunneling mechanism to drift-diffusion mechanism as the gate voltage increases. The changing point is a good indicator to evaluate the efficiency of the MSB junction. Since the current transport mechanism depends on bias condition, the extraction of mobility should be treated carefully, especially at low gate voltage.

Original languageEnglish
Title of host publicationESSDERC07 - 2007 37th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages307-310
Number of pages4
ISBN (Print)1424411238, 9781424411238
DOIs
StatePublished - 1 Jan 2007
EventESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany
Duration: 11 Sep 200713 Sep 2007

Publication series

NameESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
Volume2007

Conference

ConferenceESSDERC 2007 - 37th European Solid-State Device Research Conference
CountryGermany
CityMunich
Period11/09/0713/09/07

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