CURRENT TRANSPORT MECHANISMS OF METAL-POLYCRYSTALLINE SILICON SCHOTTKY BARRIER SOLAR CELLS.

Wei Hwang; E. S. Yang; H. C. Card; C. M. Wu

CURRENT TRANSPORT MECHANISMS OF METAL-POLYCRYSTALLINE SILICON SCHOTTKY BARRIER SOLAR CELLS.

Wei Hwang^*, E. S. Yang, H. C. Card, C. M. Wu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

A description is given of the results of a theoretical study of the electrical and photovoltaic properties of metal-polycrystalline silicon contacts. An analysis of the dark behavior of these structures reveals that the current may be dominated either by majority carrier or by minority carrier transport, depending upon the conditions of Schottky barrier height and parameters which characterize the grain boundaries. Experimental verification of this theory is provided by the present results for Al-cast polysilicon contacts and by previously reported characteristics for thin films. The implications for solar cell parameters (open-circuit voltage, fill-factor, and conversion efficiency) are also discussed.

Original language	English
Pages (from-to)	404-409
Number of pages	6
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
State	Published - 1 Jan 1980
Event	Conf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA Duration: 7 Jan 1980 → 10 Jan 1980

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@article{37ca7f2922904469bcfe4df2c998abdc,

title = "CURRENT TRANSPORT MECHANISMS OF METAL-POLYCRYSTALLINE SILICON SCHOTTKY BARRIER SOLAR CELLS.",

abstract = "A description is given of the results of a theoretical study of the electrical and photovoltaic properties of metal-polycrystalline silicon contacts. An analysis of the dark behavior of these structures reveals that the current may be dominated either by majority carrier or by minority carrier transport, depending upon the conditions of Schottky barrier height and parameters which characterize the grain boundaries. Experimental verification of this theory is provided by the present results for Al-cast polysilicon contacts and by previously reported characteristics for thin films. The implications for solar cell parameters (open-circuit voltage, fill-factor, and conversion efficiency) are also discussed.",

author = "Wei Hwang and Yang, {E. S.} and Card, {H. C.} and Wu, {C. M.}",

year = "1980",

month = jan,

day = "1",

language = "English",

pages = "404--409",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 07-01-1980 Through 10-01-1980",

}

TY - JOUR

T1 - CURRENT TRANSPORT MECHANISMS OF METAL-POLYCRYSTALLINE SILICON SCHOTTKY BARRIER SOLAR CELLS.

AU - Hwang, Wei

AU - Yang, E. S.

AU - Card, H. C.

AU - Wu, C. M.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - A description is given of the results of a theoretical study of the electrical and photovoltaic properties of metal-polycrystalline silicon contacts. An analysis of the dark behavior of these structures reveals that the current may be dominated either by majority carrier or by minority carrier transport, depending upon the conditions of Schottky barrier height and parameters which characterize the grain boundaries. Experimental verification of this theory is provided by the present results for Al-cast polysilicon contacts and by previously reported characteristics for thin films. The implications for solar cell parameters (open-circuit voltage, fill-factor, and conversion efficiency) are also discussed.

AB - A description is given of the results of a theoretical study of the electrical and photovoltaic properties of metal-polycrystalline silicon contacts. An analysis of the dark behavior of these structures reveals that the current may be dominated either by majority carrier or by minority carrier transport, depending upon the conditions of Schottky barrier height and parameters which characterize the grain boundaries. Experimental verification of this theory is provided by the present results for Al-cast polysilicon contacts and by previously reported characteristics for thin films. The implications for solar cell parameters (open-circuit voltage, fill-factor, and conversion efficiency) are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0018914786&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0018914786

SP - 404

EP - 409

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

SN - 0160-8371

Y2 - 7 January 1980 through 10 January 1980

ER -