Current transport mechanism for HfO 2 gate dielectrics with fluorine incorporation

Woei Cherng Wu*, Chao Sung Lai, Tzu Ming Wang, Jer Chyi Wang, Chih Wei Hsu, Ming Wen Ma, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

In this article, the current transport mechanism of fluorinated HfO2 gate dielectrics is investigated. Based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the energy band diagrams and current transport mechanisms for TaNHfOF /fluorinated-interfacial layer (IL)/Si structures. In particular, we have obtained the following quantities that will be useful for modeling and simulation: (i) fluorinated IL/Si barrier height (or conduction band offset): 3.2 eV; (ii) TaNHfOF barrier height: 2.6 eV; and (iii) trap levels at 1.3 eV (under both gate and substrate injections) below the HfOF conduction band which contributes to Frenkel-Poole conduction.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number1
DOIs
StatePublished - 1 Jan 2008

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