Current-temperature characteristics of low-temperature-sputtered (Ba,Sr)TiO3 films post treated by rapid thermal annealing

Der Chi Shye*, Jyh Shin Chen, Meng Wei Kuo, Bruce C.S. Chou, Chueh Kuei Jan, Mei Fang Wu, Bi Shiou Chiou, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This work reports the current-temperature characteristics of the low-temperature-sputtered (Ba0.8Sr0.2)TiO3 (BST) film post treated by rapid thermal annealing (RTA) in O2 ambient. The top electrode was biased under negative/positive voltage to investigate the interface properties of the Pt/BST/Pt multifilm. As the results, the current density of the RTA-treated BST film was greatly reduced owing to compensation of oxygen vacancies. The RTA-treated BST thin film biased at negative voltage exhibits a negative temperature-coefficient-resistivity (NTCR) behavior, but, intriguingly, that biased at positive voltage reveals a positive temperature-coefficient-resistivity (PTCR) behavior. According to the leakage current analysis, the Schottky emission dominates the negative biased current at upper interface, but the Heywang barrier scattering confines the positive biased current.

Original languageEnglish
Pages (from-to)217-225
Number of pages9
JournalIntegrated Ferroelectrics
Volume47
DOIs
StatePublished - 1 Jan 2002

Keywords

  • (BaSr)TiO
  • Heywang barrier
  • NTCR
  • PTCR
  • Rapid thermal annealing (RTA)
  • Schottky emission

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