Current status of resistive nonvolatile memories

Chih Yang Lin, Chih Yi Liu, Chun Chieh Lin, Tseung-Yuen Tseng

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Several emerging nonvolatile memories (NVMs) such as ferroelectric memory, magnetoresistive rams and ovonic universal memory are being developed for possible applications. Resistive random access memory (RRAM) is another interesting competitor in the class of NVMs. The RRAM is based on a large change in electrical resistance when the memory film is exposed to voltage or current pulses, and can keep high or low resistance states without any power. The ideal RRAM should have the superior properties of reversible switching, long retention time, multilevel switching, simple structure, small size, and low operating voltage. Perovskite oxides, transition metal oxides, and molecular materials were found to have resistive memory properties. This presentation reviews the ongoing research and development activities on future resistance NVMs technologies incorporating these new memory materials. The possible basic mechanisms for their bistable resistance switching are described. The effect of processing, composition, and structure on the properties of resistive memory materials and consequently the devices are discussed.

Original languageEnglish
Pages (from-to)61-66
Number of pages6
JournalJournal of Electroceramics
Volume21
Issue number1-4 SPEC. ISS.
DOIs
StatePublished - 1 Dec 2008

Keywords

  • Molecular materials
  • Nonvolatile memories
  • Perovskite oxides
  • Resistance random access memory (RRAM)
  • Transition metal oxides

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