Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template

Cheng-Huang Kuo*, Li Chuan Chang, Hsiu Mei Chou

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.

Original languageEnglish
Article number6134636
Pages (from-to)608-610
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number7
DOIs
StatePublished - 30 Mar 2012

Keywords

  • Current spreading
  • InGaN/GaN
  • light-emitting diode (LED)
  • nano

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