Current properties of GaN V-defect using conductive atomic force microscopy

Ling Lee*, Ching Shun Ku, Wen Cheng Ke, Chih Wei Ho, Huai Ying Huang, Ming Chih Lee, Wen Hsiung Chen, Wu-Ching Chou, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Current conduction behavior on GaN V-defect was studied comprehensively using conductive atomic force microscopy. Experimental results indicate that the forward current in the V-defect region is at least three-order higher than that at surrounding area. On the other hand, a snowflake-like leakage current pattern was observed in the V-defect owing to the ease of current breakdown at the crest lines and perimeters. Further static current-voltage measurement suggests that the current flow is governed by Schottky emission and Fowler-Nordheim tunneling for V-defect region and surrounding area, respectively.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number29-32
DOIs
StatePublished - 11 Aug 2006

Keywords

  • CAFM
  • Fowler-Nordheim tunneling
  • GaN
  • Schottky
  • V-defect

Fingerprint Dive into the research topics of 'Current properties of GaN V-defect using conductive atomic force microscopy'. Together they form a unique fingerprint.

  • Cite this