Current gain modulation and 1/f noise control of GaAs based HBTs using on-ledge schottky diodes

P. Ma*, Mau-Chung Chang, Y. Yang, P. Zampardi, R. T. Huang, J. Sheu, G. P. Li

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

The HBT's current gain and 1/f noise can be effectively modulated and controlled by using on-ledge Schottky diodes, respectively. The behavior of the gain modulation is determined by the extent of the emitter ledge depletion. If the ledge is partially depleted, HBT's current gain can be modulated only in the low base-emitter bias (VBE) range (<1.35V). On the contrary, if the ledge is fully depleted, HBT's current gain can be modulated in the whole VBE range up to 1.6V. Furthermore, in the case with a fully depleted ledge, the 1/f noise spectra density can be greatly reduced to be independent of the base current by biasing the on-ledge Schottky diode at a high voltage (VL<VBE). These discoveries not only lead to a simple method of monitoring the effectiveness of HBT's ledge passivation bur also create a four-terminal HBT with an extra ledge electrode biased to control device's current gain and 1/f noise.

Original languageEnglish
Pages245-248
Number of pages4
DOIs
StatePublished - 1 Dec 2000
Event2000 IEEE GaAs IC Symposium - Seattle, WA, United States
Duration: 5 Nov 20008 Nov 2000

Conference

Conference2000 IEEE GaAs IC Symposium
CountryUnited States
CitySeattle, WA
Period5/11/008/11/00

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