Current gain increase of n-p-n transistors by electromigration of atomic hydrogen in emitter polysilicon

J. Zhao*, G. P. Li, K. Y. Liao, M. R. Chin, J. Y.C. Sun, T. Y. Chiu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The current gain (β) increase of n-p-n transistors induced by forward current stress is investigated in this paper. The mechanism of β increase is identified as electromigration of atomic hydrogen in polysilicon by high density current, and its subsequent passivation of silicon dangling bonds at poly/monosilicon interface and poly grain boundaries. The hydrogen passivation results in a reduction of surface recombination velocity thus decreasing base current and increasing β. The effects of hydrogen in emitter poly must be taken into account if bipolar reliability is to be improved.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages122-126
Number of pages5
ISBN (Print)0780307828, 9780780307827
DOIs
StatePublished - 1993
Event31st Annual Proceedings of the 1993 Reliability Physics - Atlanta, GA, USA
Duration: 23 Mar 199325 Mar 1993

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

Conference31st Annual Proceedings of the 1993 Reliability Physics
CityAtlanta, GA, USA
Period23/03/9325/03/93

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