@inproceedings{f3d84139933b4dadbdff01c149962d7f,
title = "Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology",
abstract = "The conventional hydrogen-contained plasma etching for emitter via hole opening can introduce atomic hydrogen into poly emitter. After short time forward current stress, p-n-p transistors fabricated by this process show increase of both current gain (β) and base current 1/f noise in the median bias region. The subsequent low temperature annealing characteristics of p-n-p indicate that hydrogen boron pairs are dissociated. The β increase during current stress can be explained by the reduction of effective surface recombination velocity of emitter due to hydrogen boron pair formation.",
author = "Ji Zhao and Li, {G. P.} and Liao, {K. Y.} and Chin, {Maw Rong} and Sun, {J. Y.}",
year = "1993",
language = "English",
isbn = "0819410004",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",
pages = "221--228",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "null ; Conference date: 21-09-1992 Through 22-09-1992",
}