Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology

Ji Zhao*, G. P. Li, K. Y. Liao, Maw Rong Chin, J. Y. Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The conventional hydrogen-contained plasma etching for emitter via hole opening can introduce atomic hydrogen into poly emitter. After short time forward current stress, p-n-p transistors fabricated by this process show increase of both current gain (β) and base current 1/f noise in the median bias region. The subsequent low temperature annealing characteristics of p-n-p indicate that hydrogen boron pairs are dissociated. The β increase during current stress can be explained by the reduction of effective surface recombination velocity of emitter due to hydrogen boron pair formation.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages221-228
Number of pages8
ISBN (Print)0819410004
StatePublished - 1993
EventMicroelectronics Manufacturing and Reliability - San Jose, CA, USA
Duration: 21 Sep 199222 Sep 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1802
ISSN (Print)0277-786X

Conference

ConferenceMicroelectronics Manufacturing and Reliability
CitySan Jose, CA, USA
Period21/09/9222/09/92

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  • Cite this

    Zhao, J., Li, G. P., Liao, K. Y., Chin, M. R., & Sun, J. Y. (1993). Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 221-228). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1802). Publ by Int Soc for Optical Engineering.