Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology

Ji Zhao; G. P. Li; K. Y. Liao; Maw Rong Chin; J. Y. Sun

Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology

Ji Zhao^*, G. P. Li, K. Y. Liao, Maw Rong Chin, J. Y. Sun

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The conventional hydrogen-contained plasma etching for emitter via hole opening can introduce atomic hydrogen into poly emitter. After short time forward current stress, p-n-p transistors fabricated by this process show increase of both current gain (β) and base current 1/f noise in the median bias region. The subsequent low temperature annealing characteristics of p-n-p indicate that hydrogen boron pairs are dissociated. The β increase during current stress can be explained by the reduction of effective surface recombination velocity of emitter due to hydrogen boron pair formation.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Publ by Int Soc for Optical Engineering
Pages	221-228
Number of pages	8
ISBN (Print)	0819410004
State	Published - 1993
Event	Microelectronics Manufacturing and Reliability - San Jose, CA, USA Duration: 21 Sep 1992 → 22 Sep 1992

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1802
ISSN (Print)	0277-786X

Conference

Conference	Microelectronics Manufacturing and Reliability
City	San Jose, CA, USA
Period	21/09/92 → 22/09/92

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Zhao, J., Li, G. P., Liao, K. Y., Chin, M. R., & Sun, J. Y. (1993). Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 221-228). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1802). Publ by Int Soc for Optical Engineering.

Zhao, Ji ; Li, G. P. ; Liao, K. Y. ; Chin, Maw Rong ; Sun, J. Y. / Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology. Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1993. pp. 221-228 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{f3d84139933b4dadbdff01c149962d7f,

title = "Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology",

abstract = "The conventional hydrogen-contained plasma etching for emitter via hole opening can introduce atomic hydrogen into poly emitter. After short time forward current stress, p-n-p transistors fabricated by this process show increase of both current gain (β) and base current 1/f noise in the median bias region. The subsequent low temperature annealing characteristics of p-n-p indicate that hydrogen boron pairs are dissociated. The β increase during current stress can be explained by the reduction of effective surface recombination velocity of emitter due to hydrogen boron pair formation.",

author = "Ji Zhao and Li, {G. P.} and Liao, {K. Y.} and Chin, {Maw Rong} and Sun, {J. Y.}",

year = "1993",

language = "English",

isbn = "0819410004",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Int Soc for Optical Engineering",

pages = "221--228",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "null ; Conference date: 21-09-1992 Through 22-09-1992",

}

Zhao, J, Li, GP, Liao, KY, Chin, MR & Sun, JY 1993, Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1802, Publ by Int Soc for Optical Engineering, pp. 221-228, Microelectronics Manufacturing and Reliability, San Jose, CA, USA, 21/09/92.

Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology. / Zhao, Ji; Li, G. P.; Liao, K. Y.; Chin, Maw Rong; Sun, J. Y.

Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1993. p. 221-228 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1802).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology

AU - Zhao, Ji

AU - Li, G. P.

AU - Liao, K. Y.

AU - Chin, Maw Rong

AU - Sun, J. Y.

PY - 1993

Y1 - 1993

N2 - The conventional hydrogen-contained plasma etching for emitter via hole opening can introduce atomic hydrogen into poly emitter. After short time forward current stress, p-n-p transistors fabricated by this process show increase of both current gain (β) and base current 1/f noise in the median bias region. The subsequent low temperature annealing characteristics of p-n-p indicate that hydrogen boron pairs are dissociated. The β increase during current stress can be explained by the reduction of effective surface recombination velocity of emitter due to hydrogen boron pair formation.

AB - The conventional hydrogen-contained plasma etching for emitter via hole opening can introduce atomic hydrogen into poly emitter. After short time forward current stress, p-n-p transistors fabricated by this process show increase of both current gain (β) and base current 1/f noise in the median bias region. The subsequent low temperature annealing characteristics of p-n-p indicate that hydrogen boron pairs are dissociated. The β increase during current stress can be explained by the reduction of effective surface recombination velocity of emitter due to hydrogen boron pair formation.

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M3 - Conference contribution

AN - SCOPUS:0027202986

SN - 0819410004

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 221

EP - 228

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Publ by Int Soc for Optical Engineering

Y2 - 21 September 1992 through 22 September 1992

ER -

Zhao J, Li GP, Liao KY, Chin MR, Sun JY. Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology. In Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering. 1993. p. 221-228. (Proceedings of SPIE - The International Society for Optical Engineering).

Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology

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