Current-field characteristics of oxides grown from polycrystalline silicon

Chen-Ming Hu*, Ying Shum, Tom Klein, Elroy Lucero

*Corresponding author for this work

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

A new technique determined the J-E characteristics of silicon dioxide grown from polycrystalline silicon with greatly improved sensitivity. More importantly, the current density was measured over a 10-decade range without the problem of current drift or uncertainty about the field at the cathode surface due to charge trapping in the oxide. The apparent barrier height decreased with increasing electric field as if the barrier lowering was due to field enhancement at surface asperities of about 500 Å in size. The technique is applicable to other dielectrics where charge trapping presents difficulties to J-E measurements.

Original languageEnglish
Pages (from-to)189-191
Number of pages3
JournalApplied Physics Letters
Volume35
Issue number2
DOIs
StatePublished - 1 Dec 1979

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