Current conduction and stability of CeO2/La2O 3 stacked gate dielectric

Hei Wong*, B. L. Yang, Shurong Dong, H. Iwai, K. Kakushima, P. Ahmet

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The current conduction behaviors in CeO2/La2O 3 stack are studied. We found that large amount of hole injection under large negative gate bias can give rise to the accumulation of neutral interstitial oxygen (OI) species which serve as acceptors and promotes the hole conduction in the La2O3 film. Whereas if the amount of hole injection is lower than that of the oxygen anions injected from the capping CeO2 layer under a sufficient large negative gate bias, the amount of OI reduces and a negative charge built-up results which further reduces the leakage current and threshold voltage of p-channel metal-oxide-semiconductor transistors.

Original languageEnglish
Article number233507
JournalApplied Physics Letters
Volume101
Issue number23
DOIs
StatePublished - 3 Dec 2012

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