CuCuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors

M. C. Wang*, T. C. Chang, Po-Tsun Liu, Y. Y. Li, R. W. Xiao, L. F. Lin, J. R. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The feasibility of using CuCuMg as a gate electrode for a-Si:H thin-film transistors (TFTs) has been investigated in this work. The issue of adhesion between the Cu film and glass substrates has been overcome by introducing the CuCuMg alloy. Furthermore, a wet-etching process of Cu-based gate metal has been proposed by using the copper etchant in the conventional printed circuit boards. The experimental result showed superior performance of a-Si:H TFT with desired electrode taper angle and minimal loss of critical dimension. The a-Si:H TFT exhibited mobility of 0.37 cm2 V s, subthreshold slope of 0.83 Vdec, and Vth of 2.02 V.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume10
Issue number8
DOIs
StatePublished - 20 Jun 2007

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