[Cu 4 {Se 2 P(O i Pr) 2 } 4 ]: A novel precursor enabling preparation of nonstoichiometric copper selenide (Cu 2-x Se) nanowires

Yung-Jung Hsu, Chiu Ming Hung, Yi Feng Lin, Ben Jie Liaw, Tarlok S. Lobana, Shih Yuan Lu*, C. W. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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A newly synthesized, selenium-bridged copper cluster [Cu 4 {Se 2 P(O i Pr) 2 } 4 ] was employed in a single-source chemical vapor deposition (SSCVD) process to produce single-crystalline nonstoichiometric Cu 2-x Se nanowires for the first time. This is the first discrete, chalcogen-bridged copper cluster being used successfully for the fabrication of ID copper chalcogenide nanostructure. The crystalline structure and chemical composition of the resulting nanowires were examined and confirmed with X-ray diffraction, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectrometry analyses. Relevant characterizations revealed that a thin film of CuSe was first formed on the substrate surface due to the thermal decomposition of [Cu 4 {Se 2 P(O i Pr) 2 } 4 ]; subsequently, the Cu 2-x Se nanowires were grown on the CuSe thin film through a self-catalytic vapor-liquid-solid (VLS) growth mechanism with the Cu particles generated in-situ acting as the catalyst. The Cu 2-x Se nanowires were found to possess a direct band gap absorption at 558 nm and emit excitonic photoluminescence at 575 nm.

Original languageEnglish
Pages (from-to)3323-3329
Number of pages7
JournalChemistry of Materials
Issue number14
StatePublished - 11 Jul 2006

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