Cu Contamination Effect in Oxynitride Gate Dielectrics

Y. H. Lin*, Fu-Ming Pan, Y. C. Liao, Y. C. Chen, I. J. Hsieh, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We have studied the effect of Cu contamination in oxynitride gate dielectrics. Compared to thermal SiO2 with a physical thickness of 3-5 nm, the oxynitride shows a much improved Cu contamination resistance. Furthermore, the Cu contamination resistance increases with increasing nitrogen content. The mechanism of improved gate dielectric resistance to Cu is due to the strong diffusion barrier properties of oxynitride as observed by secondary ion mass spectroscopy.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume148
Issue number11
DOIs
StatePublished - 1 Nov 2001

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