Crystallization of electroless Ni-P under bump metallization induced by solder reaction

J. W. Jang, P. G. Kim, King-Ning Tu, D. R. Frear

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Solder reaction-assisted crystallization of electroless Ni-P under bump metallization in the Si/SiO2/Al/Ni-P/63Sn-37Pb multilayer structure was analyzed using transmission electron microscopy, scanning electron microscopy, energy dispersive X-ray, and electron probe microanalysis. The electroless Ni-P had an amorphous structure and a composition of Ni85P15 in the as-plated condition. Upon reflow, the electroless Ni-P transformed to Ni3Sn4 and Ni3P. The crystallization of electroless Ni-P to Ni3P was induced by Ni depletion from electroless Ni-P to form Ni3Sn4. The crystallization kinetics were found to be diffusion-controlled.

Original languageEnglish
Title of host publicationProceedings - International Symposium on Advanced Packaging Materials
Subtitle of host publicationProcesses, Properties and Interfaces
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages252-255
Number of pages4
ISBN (Electronic)0930815564, 9780930815561
DOIs
StatePublished - 1 Jan 1999
Event1999 International Symposium on Advanced Packaging Materials - Braselton, United States
Duration: 14 Mar 199917 Mar 1999

Publication series

NameProceedings - International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces

Conference

Conference1999 International Symposium on Advanced Packaging Materials
CountryUnited States
CityBraselton
Period14/03/9917/03/99

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    Jang, J. W., Kim, P. G., Tu, K-N., & Frear, D. R. (1999). Crystallization of electroless Ni-P under bump metallization induced by solder reaction. In Proceedings - International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces (pp. 252-255). [757322] (Proceedings - International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAPM.1999.757322