Crystallization kinetics of amorphous NiSix films

R. D. Thompson*, J. Angilello, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In situ resistivity measurements have been used to determine the kinetics of crystal growth of co-evaporated NiSix films. Samples with various heat treatments have been examined with X-ray diffaction to determine the phases growing. It is found that all the films contain crystallites as deposited and that NiSi2 or Ni2Si grow in most of them. The variations in activation energy and the "mode of transformation" with composition are explained.

Original languageEnglish
Pages (from-to)259-265
Number of pages7
JournalThin Solid Films
Volume188
Issue number2
DOIs
StatePublished - 15 Jul 1990

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