This article reports the quality of In xGa 1-xAs (0 < x < 0.2) layers grown on 15°-off GaAs substrate by metalorganic chemical vapor deposition. The crystalline quality of the In xGa 1-xAs epilayers is determined by x-ray reciprocal space mapping (RSM). From the RSM results, the crystalline quality of In xGa 1-xAs epilayers grown with small indium composition (x < 0.11) is better than that of large indium composition (x > 0.11) due to the small strain relaxation. The crystalline quality of In xGa 1-xAs epilayer is found to strongly depend on indium content. The photovoltaic performance of p-n structure In 0.16Ga 0.84As solar cell shows the lower device performance, because the In xGa 1-xAs films grown on 15°-off GaAs substrate show a large strain relaxation in the active layer of solar cell. It results in dislocation defects created at the initial active layer/In xGa 1-xAs graded layer interface. The performance of In 0.16Ga 0.84As solar cell with p-n structure can be significantly improved by the p-i-n structure.
- In Ga As solar cell
- Misoriented GaAs substrate
- X-ray reciprocal space mapping