Crystal structures of BaMgF4-xOxn thin films

Xiaoli Wang*, Shinobu Fujihara, Toshio Kimura, Haydn Chen

*Corresponding author for this work

Research output: Contribution to journalConference article

5 Scopus citations


A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
Issue number1
StatePublished - 1 Dec 2001
Event3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China
Duration: 12 Dec 200015 Dec 2000


  • crystal structure
  • phase transformation
  • thin film

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