Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate

Chien Chih Chen, Chun Yan Yap, Wen Yang Hsu, Cheng Ta Kuo, Tzong Liang Tsai, Jui Yi Chu, Yew-Chuhg Wu

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3 Scopus citations

Abstract

The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.

Original languageEnglish
JournalECS Solid State Letters
Volume3
Issue number9
DOIs
StatePublished - 1 Jan 2014

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