Crystal quality and light output power of GaN-based LEDs grown on concave patterned sapphire substrate

Yew-Chuhg Wu*, A. Panimaya Selvi Isabel, Jian Hsuan Zheng, Bo Wen Lin, Jhen Hong Li, Chia Chen Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

Original languageEnglish
Pages (from-to)1993-1999
Number of pages7
JournalMaterials
Volume8
Issue number4
DOIs
StatePublished - 1 Jan 2015

Keywords

  • Concave patterned sapphire substrate
  • Crystal quality
  • Gan-based led
  • Light output power

Fingerprint Dive into the research topics of 'Crystal quality and light output power of GaN-based LEDs grown on concave patterned sapphire substrate'. Together they form a unique fingerprint.

  • Cite this