Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio

Deepak Anandan, Venkatesan Nagarajan, Ramesh Kumar Kakkerla, Hung Wei Yu, Hua Lun Ko, Sankalp Kumar Singh, Ching Ting Lee, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 × 10−5 to 8.0 × 10−5 mol/min, wurtzite segment length of InSb NW increases from 16 ± 9 nm to 89 ± 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications.

Original languageEnglish
Pages (from-to)30-36
Number of pages7
JournalJournal of Crystal Growth
Volume522
DOIs
StatePublished - 15 Sep 2019

Keywords

  • A1. Crystal structure
  • A2. Semiconducting III-V materials
  • A3. MOCVD
  • B1. Antimonides
  • B1. Nanomaterials
  • B3. Infrared devices

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