Crystal-orientation-tolerant voltage regulator using monolithic 3D BEOL FinFETs in single-crystal islands for on-chip power delivery network

Po Tsang Huang*, Yu Wei Liu, Kuan Fu Lai, Yun Ping Lan, Tzung Han Tsai, Bo Jheng Shih, Ping Yi Hsieh, Chih Chao Yang, Chang Hong Shen, Jia Min Shieh, Da Chiang Chang, Kuan Neng Chen, Wen Kuan Yeh, Chenming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate single-crystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits. The single-crystallinity are verified with SECCO etch, HREM, TEM, and EBSD. BEOL FinFETs fabricated in the designed single-crystal Si islands exhibit excellent electrical performance and low intra-island variability. To mitigate the effects of island-to-island device variation due to random island crystal orientations, crystal-orientation-tolerant voltage regulator is further proposed by allocating power gating (PG) cells among multiple Si islands, and 42% power noise suppression can be achieved.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages40.6.1-40.6.4
ISBN (Electronic)9781728188881
DOIs
StatePublished - 12 Dec 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 12 Dec 202018 Dec 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
CountryUnited States
CityVirtual, San Francisco
Period12/12/2018/12/20

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