In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric on Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect due to the two-dimensional strain effect.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||3 A|
|State||Published - 8 Mar 2006|
- Geometry effects
- Ultra thin