Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics

Yao Jen Lee*, Pei Tsang Ho, Wen Luh Yang, Tien-Sheng Chao, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric on Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect due to the two-dimensional strain effect.

Original languageEnglish
Pages (from-to)1520-1524
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number3 A
DOIs
StatePublished - 8 Mar 2006

Keywords

  • Geometry effects
  • Nitrogen
  • Orientation
  • Si(100)
  • Si(111)
  • Ultra thin

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