Crucial integration of high work-function metal gate and high- k blocking oxide on charge-trapping type flash memory device

Ping Hung Tsai*, Kuei Shu Chang-Liao, Dong Wei Yang, Yuan Bin Chung, Tien Ko Wang, P. J. Tzeng, C. H. Lin, L. S. Lee, M. J. Tsai, Albert Chin

*Corresponding author for this work

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Abstract

Charge-trapping type flash memory devices with various integrations of metal gates having different work functions and blocking oxides were investigated in this work. Improved erasing speed together with acceptable reliability characteristics can be achieved by the integration of high work-function metal gate and high- k blocking oxide due to an efficient suppression of electron back tunneling through the blocking oxide during erasing operation for the MoN sample. Specifically, the high work-function value of MoN metal gate can be kept only by integrating with the Al2 O3 blocking oxide because it can suppress the formation of molybdenum-silicide. Moreover, high-speed erasing can also be demonstrated by combining the MoN metal gate with an HfAlO charge trapping layer when band-to-band hot hole erasing method is adopted.

Original languageEnglish
Article number252902
JournalApplied Physics Letters
Volume93
Issue number25
DOIs
StatePublished - 1 Dec 2008

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    Tsai, P. H., Chang-Liao, K. S., Yang, D. W., Chung, Y. B., Wang, T. K., Tzeng, P. J., Lin, C. H., Lee, L. S., Tsai, M. J., & Chin, A. (2008). Crucial integration of high work-function metal gate and high- k blocking oxide on charge-trapping type flash memory device. Applied Physics Letters, 93(25), [252902]. https://doi.org/10.1063/1.3043976