Crosstalk between Single-Photon Avalanche Diodes in a 0.18-μm High-Voltage CMOS Process

Dai Rong Wu, Chia-Ming Tsai, Yi Hsiang Huang, Sheng-Di Lin*

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Crosstalk between single-photon avalanche diodes (SPADs) fabricated by the standard CMOS process is extensively investigated. The dependence of device structure, device-to-device distance, and bias voltage on crosstalk has been experimentally studied. Our work reveals that direct-path optical crosstalk dominates in these CMOS SPADs, which is also confirmed with the first time-correlated crosstalk measurement. This work is valuable for SPAD array design and optimization in CMOS technology.

Original languageEnglish
Pages (from-to)833-837
Number of pages5
JournalJournal of Lightwave Technology
Volume36
Issue number3
DOIs
StatePublished - 1 Feb 2018

Keywords

  • Breakdown flash
  • CMOS technology
  • crosstalk
  • single-photon avalanche diodes

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