Crosstalk between Single-Photon Avalanche Diodes in a 0.18-μm High-Voltage CMOS Process

Dai Rong Wu; Chia-Ming Tsai; Yi Hsiang Huang; Sheng-Di Lin

doi:10.1109/JLT.2017.2779490

Crosstalk between Single-Photon Avalanche Diodes in a 0.18-μm High-Voltage CMOS Process

Dai Rong Wu, Chia-Ming Tsai, Yi Hsiang Huang, Sheng-Di Lin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article

4 Scopus citations

Abstract

Crosstalk between single-photon avalanche diodes (SPADs) fabricated by the standard CMOS process is extensively investigated. The dependence of device structure, device-to-device distance, and bias voltage on crosstalk has been experimentally studied. Our work reveals that direct-path optical crosstalk dominates in these CMOS SPADs, which is also confirmed with the first time-correlated crosstalk measurement. This work is valuable for SPAD array design and optimization in CMOS technology.

Original language	English
Pages (from-to)	833-837
Number of pages	5
Journal	Journal of Lightwave Technology
Volume	36
Issue number	3
DOIs	https://doi.org/10.1109/JLT.2017.2779490
State	Published - 1 Feb 2018

Keywords

Breakdown flash
CMOS technology
crosstalk
single-photon avalanche diodes

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Wu, D. R., Tsai, C-M., Huang, Y. H., & Lin, S-D. (2018). Crosstalk between Single-Photon Avalanche Diodes in a 0.18-μm High-Voltage CMOS Process. Journal of Lightwave Technology, 36(3), 833-837. https://doi.org/10.1109/JLT.2017.2779490

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