Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

Tien-Sheng Chao, T. F. Lei

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2 Scopus citations

Abstract

Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.

Original languageEnglish
Pages (from-to)L34-L35
JournalJournal of the Electrochemical Society
Volume142
Issue number3
DOIs
StatePublished - 1 Jan 1995

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