Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well

Shun-Tsung Lo, Kuang Yao Chen, Yi Chun Su, C. T. Liang*, Y. H. Chang, Gil Ho Kim, J. Y. Wu, Sheng-Di Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well. With increasing temperature T, a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed. Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T.

Original languageEnglish
Pages (from-to)1104-1107
Number of pages4
JournalSolid State Communications
Volume150
Issue number25-26
DOIs
StatePublished - 1 Jul 2010

Keywords

  • A. Quantum wells
  • A. Semiconductors
  • D. Quantum localization

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