Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well

Shun-Tsung Lo; Kuang Yao Chen; Yi Chun Su; C. T. Liang; Y. H. Chang; Gil Ho Kim; J. Y. Wu; Sheng-Di Lin

doi:10.1016/j.ssc.2010.03.030

Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well

Shun-Tsung Lo, Kuang Yao Chen, Yi Chun Su, C. T. Liang^*, Y. H. Chang, Gil Ho Kim, J. Y. Wu, Sheng-Di Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well. With increasing temperature T, a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed. Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T.

Original language	English
Pages (from-to)	1104-1107
Number of pages	4
Journal	Solid State Communications
Volume	150
Issue number	25-26
DOIs	https://doi.org/10.1016/j.ssc.2010.03.030
State	Published - 1 Jul 2010

Keywords

A. Quantum wells
A. Semiconductors
D. Quantum localization

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title = "Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well",

abstract = "We have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well. With increasing temperature T, a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed. Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T.",

keywords = "A. Quantum wells, A. Semiconductors, D. Quantum localization",

author = "Shun-Tsung Lo and Chen, {Kuang Yao} and Su, {Yi Chun} and Liang, {C. T.} and Chang, {Y. H.} and Kim, {Gil Ho} and Wu, {J. Y.} and Sheng-Di Lin",

year = "2010",

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doi = "10.1016/j.ssc.2010.03.030",

language = "English",

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journal = "Solid State Communications",

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TY - JOUR

T1 - Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well

AU - Lo, Shun-Tsung

AU - Chen, Kuang Yao

AU - Su, Yi Chun

AU - Liang, C. T.

AU - Chang, Y. H.

AU - Kim, Gil Ho

AU - Wu, J. Y.

AU - Lin, Sheng-Di

PY - 2010/7/1

Y1 - 2010/7/1

N2 - We have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well. With increasing temperature T, a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed. Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T.

AB - We have performed magnetoresistance measurements on a Si delta-doped GaAs single quantum well. With increasing temperature T, a crossover from negative magnetoresistance (NMR) to positive magnetoresistance (PMR) can be observed. Our experimental results suggest that such a crossover corresponds to a transition from variable range hopping regime to activated electron transport. This is also consistent with the measured non-monotonic carrier density dependence on T.

KW - A. Quantum wells

KW - A. Semiconductors

KW - D. Quantum localization

UR - http://www.scopus.com/inward/record.url?scp=77953292665&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2010.03.030

DO - 10.1016/j.ssc.2010.03.030

M3 - Article

AN - SCOPUS:77953292665

VL - 150

SP - 1104

EP - 1107

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 25-26

ER -

Crossover from negative to positive magnetoresistance in a Si delta-doped GaAs single quantum well

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Keywords

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