Crossbar array of selector-less TaOx/TiO2 bilayer RRAM

Chun Tse Chou, Boris Hudec*, Chung Wei Hsu, Wei Li Lai, Chih Cheng Chang, Tuo-Hung Hou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

In this work, we have implemented self-rectifying TaOx/TiO2 RRAM in a selector-less 6 × 6 crossbar array with various desiring features, including: (1) simple fabrication using only three masks, (2) high self-rectifying ratio up to 103 for sneak current suppression, (3) stable bipolar resistive-switching characteristics without the need for electro-forming and current compliance, (4) data retention time over 104 s, and (5) robust READ and WRITE disturb immunity. Finally, an achievable array size of 1 Mb was simulated using an All-LPU read scheme and a V/3 write scheme.

Original languageEnglish
Pages (from-to)2220-2223
Number of pages4
JournalMicroelectronics Reliability
Volume55
Issue number11
DOIs
StatePublished - Nov 2015

Keywords

  • Bilayer
  • Crossbar array
  • Forming-free
  • RRAM
  • Self-rectifying
  • TiO2

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