Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films

Chi Hui Chien, Sheng Rui Jian*, Chung Ting Wang, Jenh-Yih Juang, J. C. Huang, Yi Shao Lai

*Corresponding author for this work

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

Nanoindentation-induced mechanical deformation in GaN thin films prepared by metal-organic chemical-vapour deposition was investigated using the Berkovich diamond tip in combination with the cross-sectional transmission electron microscopy (XTEM). By using focused ion beam milling to accurately position the cross-section of the indented region, the XTEM results demonstrate that the major plastic deformation was taking place through the propagation of dislocations. The present observations are in support of attributing the pop-ins that appeared in the load-displacement curves to the massive dislocation activities occurring underneath the indenter during the loading cycle. The absence of indentation-induced new phases might have been due to the stress relaxation via the substrate and is also consistent with the fact that no discontinuity was found upon unloading.

Original languageEnglish
Article number011
Pages (from-to)3985-3990
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume40
Issue number13
DOIs
StatePublished - 7 Jul 2007

Fingerprint Dive into the research topics of 'Cross-sectional transmission electron microscopy observations on the Berkovich indentation-induced deformation microstructures in GaN thin films'. Together they form a unique fingerprint.

  • Cite this