Cross-plane thermoelectric figure of merit in graphene - C60 heterostructures at room temperature

Daniel Olaya, Chien Chih Tseng, Wen-Hao Chang, Wen Pin Hsieh, Lain Jong Li, Zhen Yu Juang*, Yenny Hernández

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The quantum nature of low dimensional materials such as graphene and C 60 is yet to be exploited in thermoelectric (TE) applications. A source of reproducible high-quality graphene is its growth by chemical vapour deposition (CVD) and subsequent transfer onto arbitrary substrates. In this work, heterostructures based on graphene and C 60 clusters were studied by means of the Transient Harman Method (THM). This study revealed a thermoelectric figure of merit, ZT, up to 1.4. The efficiency of the measured devices is attributed to a decrease of the thermal conductivity due to the presence of the layers and a significant value of the Seebeck coefficient (up to 200 μV/K). This type of heterostructures could also be prepared on transparent flexible substrates with a measured ZT of 0.36.

Original languageEnglish
Article number100089
Pages (from-to)1-5
Number of pages5
StatePublished - Mar 2019


  • C60 Fullerene
  • Graphene
  • Heterostructure
  • Layered material
  • Thermoelectric
  • Transient Harman Method

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