Creation of in-plane anisotropic strain in GaAs/AlXGa1-XAs multiple quantum well structures

Y. Lu*, Hao-Chung Kuo, H. Shen, M. Taysing-Lara, M. Wraback, J. Pamulapati, M. Dutta, J. Kosinski, R. Sacks

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Thin film of GaAs/AlGaAs multiple quantum well (MQW) structure have been bonded to the lithium tantalate (LiTaO3) or calcium carbonate (CaCO3) substrates cut such that one of the linear thermal expansion coefficients almost matches that of the MQW while its orthogonal counterpart does not. By choosing the proper bonding and operating temperatures, in-plane anisotropic strain up to 0.3% has been achieved. The transmission spectrum shows an anisotropy in excitonic absorption which results in a polarization rotation of a light beam at normal incidence to the structure. The theoretical calculation is in agreement with the experimental results. Using the polarization rotation, we have demonstrated a novel MQW light modulator with an exceedingly high contrast ratio of 330:1.

Original languageEnglish
Title of host publicationIII-V Electronic and Photonic Device Fabrication and Performance
EditorsK.S. Jones, S.J. Pearton, H. Kanber
PublisherPubl by Materials Research Society
Pages537-542
Number of pages6
ISBN (Print)1558991964
DOIs
StatePublished - 1 Dec 1993
EventMaterials Research Society Spring Meeting - San Francisco, CA, USA
Duration: 12 Apr 199315 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume300
ISSN (Print)0272-9172

Conference

ConferenceMaterials Research Society Spring Meeting
CitySan Francisco, CA, USA
Period12/04/9315/04/93

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