Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition

G. S. Huang, Tien-chang Lu, H. H. Yao, Hao-Chung Kuo, S. C. Wang*, Chih Wei Lin, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

100 Scopus citations

Abstract

A crack-free GaNAlN distributed Bragg reflector (DBR) incorporated with GaNAlN superlattice (SL) layers was grown on a c -plane sapphire substrate by metalorganic chemical vapor deposition. Three sets of half-wave layers consisting of 5.5 periods of GaNAlN SL layers and GaN layer were inserted in every five pairs of the 20 pair GaNAlN DBR structure to suppress the crack generation. The grown GaNAlN DBRs with SL insertion layers showed no observable cracks in the structure and achieved high peak reflectivity of 97% at 399 nm with a stop band width of 14 nm. Based on the x-ray analysis, the reduction in the in-plane tensile stress in the DBR structure with insertion of SL layers could be responsible for the suppression of crack formation and achievement of high reflectivity.

Original languageEnglish
Article number061904
JournalApplied Physics Letters
Volume88
Issue number6
DOIs
StatePublished - 1 Feb 2006

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