Coupling- and ECP-aware metal fill for improving layout uniformity in copper CMP

Yu Lun Co*, Hung-Ming Chen, Yi Kan Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

With feature sizes on chips shrinking at advanced process nodes, the difficulty in manufacturability and reliability of chips is extremely increasing. It has necessitated better planarization of chip surface topography to improve both functional and parametric yields. The common solution to minimize topography variation is to perform metal fills in empty spaces in the layout. However, these dummy metals will increase the capacitances between wires and then invoke delay and coupling/crosstalk noise problems. Furthermore, the impact of ECP (electroplating) should be included in the copper CMP model in order to have accurate metal fill results. In this paper, we adopt and implement an approach to considering especially the key layout parameters that affect the post-ECP topography. We further apply a greedy-based method to place the floating dummy metals in the positions with minimal additional coupling capacitances. The experimental results are encouraging. Our method not only considers the thickness range of post-ECP, it can also add much less additional coupling capacitances over a density-driven metal fill method.

Original languageEnglish
Title of host publication2009 International Symposium on VLSI Design, Automation and Test, VLSI-DAT '09
Pages122-125
Number of pages4
DOIs
StatePublished - 1 Dec 2009
Event2009 International Symposium on VLSI Design, Automation and Test, VLSI-DAT '09 - Hsinchu, Taiwan
Duration: 28 Apr 200930 Apr 2009

Publication series

Name2009 International Symposium on VLSI Design, Automation and Test, VLSI-DAT '09

Conference

Conference2009 International Symposium on VLSI Design, Automation and Test, VLSI-DAT '09
CountryTaiwan
CityHsinchu
Period28/04/0930/04/09

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